| 发明名称 |
SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT |
| 摘要 |
<p>A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AIN buffer layer formed on the Ga203 substrate, and a nitride semiconductor layer formed on the AIN buffer layer.</p> |
| 申请公布号 |
KR20140030180(A) |
申请公布日期 |
2014.03.11 |
| 申请号 |
KR20137029387 |
申请日期 |
2012.04.03 |
| 申请人 |
TAMURA CORPORATION;KOHA CO., LTD. |
发明人 |
SATO SHINKURO;KURAMATA AKITO;MORISHIMA YOSHIKATSU;IIZUKA KAZUYUKI |
| 分类号 |
H01L29/26;C23C16/34;H01L29/47;H01L29/778;H01L29/78 |
主分类号 |
H01L29/26 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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