发明名称 Multi-die stacking using bumps with different sizes
摘要 A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first metal bump at the first side of the first die. A dielectric layer is formed over the first side of the first die and includes a first portion directly over the second die, a second portion covering the second die. A second metal bump of a second horizontal size greater than the first horizontal size is formed on the second region of the first side of the first die. An electrical component is bonded to the first side of the first die through the second metal bump.
申请公布号 US8669174(B2) 申请公布日期 2014.03.11
申请号 US201313732543 申请日期 2013.01.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WU WENG-JIN;SHIH YING-CHING;CHIOU WEN-CHIH;JENG SHIN-PUU;YU CHEN-HUA
分类号 H01L21/44 主分类号 H01L21/44
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