发明名称 |
Semiconductor structure and fabrication method thereof |
摘要 |
A method for fabrication of a semiconductor device is provided. A first type doped body region is formed in a first type substrate. A first type heavily-doped region is formed in the first type doped body region. A second type well region and second type bar regions are formed in the first type substrate with the second type bar regions between the second type well region and the first type doped body region. The first type doped body region, the second type well region, and each of the second type bar regions are separated from each other by the first type substrate. The second type bar regions are inter-diffused to form a second type continuous region adjoining the second type well region. A second type heavily-doped region is formed in the second type well region. |
申请公布号 |
US8669149(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US201213473528 |
申请日期 |
2012.05.16 |
申请人 |
TU SHANG-HUI;TSAI HUNG-SHERN;VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
TU SHANG-HUI;TSAI HUNG-SHERN |
分类号 |
H01L21/337 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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