发明名称 Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element
摘要 An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.
申请公布号 US8669666(B2) 申请公布日期 2014.03.11
申请号 US20100907683 申请日期 2010.10.19
申请人 HAMMER MARKUS;RUHL GUENTHER;STRASSER ANDREAS;MELZL MICHAEL;GOELLNER REINHARD;GROTELOH DOERTHE;INFINEON TECHNOLOGIES AG 发明人 HAMMER MARKUS;RUHL GUENTHER;STRASSER ANDREAS;MELZL MICHAEL;GOELLNER REINHARD;GROTELOH DOERTHE
分类号 H01L23/48;H01L23/58 主分类号 H01L23/48
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