发明名称 |
Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor |
摘要 |
A method for producing a semiconductor device includes the steps of forming first and second pillar-shaped semiconductors on a substrate at the same time so as to have the same height; forming a first semiconductor layer by doping a bottom region of the first pillar-shaped semiconductor with a donor or acceptor impurity to connect the first semiconductor layer to the second pillar-shaped semiconductor; forming a circuit element including an upper semiconductor region formed by doping an upper region of the first pillar-shaped semiconductor with a donor or acceptor impurity; forming a first conductor layer in the second pillar-shaped semiconductor; forming first and second contact holes that are respectively connected to the first and second pillar-shaped semiconductors; and forming a wiring metal layer that is connected to the upper semiconductor region and the first conductor layer through the first and second contact holes, respectively. |
申请公布号 |
US8669601(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US201213609992 |
申请日期 |
2012.09.11 |
申请人 |
MASUOKA FUJIO;HARADA NOZOMU;UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. |
发明人 |
MASUOKA FUJIO;HARADA NOZOMU |
分类号 |
H01L31/062;H01L31/113 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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