发明名称 |
Tunnel field-effect transistors with superlattice channels |
摘要 |
A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure. |
申请公布号 |
US8669163(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US20100898421 |
申请日期 |
2010.10.05 |
申请人 |
BHUWALKA KRISHNA KUMAR;WANG CHING-YA;GOTO KEN-ICHI;LEE WEN-CHIN;DIAZ CARLOS H.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
BHUWALKA KRISHNA KUMAR;WANG CHING-YA;GOTO KEN-ICHI;LEE WEN-CHIN;DIAZ CARLOS H. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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