发明名称 MEMORY DEVICE AND INTEGERATED CIRCUIT
摘要 The memory device includes: a nonvolatile memory which is operated using a plurality of power sources and outputs stored repair information in response to a boot-up signal; a plurality of registers which store the repair information outputted from the nonvolatile memory; a plurality of memory banks which replace a normal cell with a redundancy cell using the repair information stored in the registers corresponding to the memory banks among the registers; and a boot-up control circuit which activates the boot-up signal when the levels of the power sources are stabilized. [Reference numerals] (301) Nonvolatile memory; (310_1,310_0,310_2,310_3) Registers; (320) Boot-up control circuit; (331,332,333) Voltage generating circuit
申请公布号 KR20140029952(A) 申请公布日期 2014.03.11
申请号 KR20120096586 申请日期 2012.08.31
申请人 SK HYNIX INC. 发明人 KIM, YEON UK;LIM, HEE JOON;HWANG, JEONG TAE
分类号 G11C16/06;G11C16/30;G11C16/32 主分类号 G11C16/06
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