发明名称 |
MEMORY DEVICE AND INTEGERATED CIRCUIT |
摘要 |
The memory device includes: a nonvolatile memory which is operated using a plurality of power sources and outputs stored repair information in response to a boot-up signal; a plurality of registers which store the repair information outputted from the nonvolatile memory; a plurality of memory banks which replace a normal cell with a redundancy cell using the repair information stored in the registers corresponding to the memory banks among the registers; and a boot-up control circuit which activates the boot-up signal when the levels of the power sources are stabilized. [Reference numerals] (301) Nonvolatile memory; (310_1,310_0,310_2,310_3) Registers; (320) Boot-up control circuit; (331,332,333) Voltage generating circuit |
申请公布号 |
KR20140029952(A) |
申请公布日期 |
2014.03.11 |
申请号 |
KR20120096586 |
申请日期 |
2012.08.31 |
申请人 |
SK HYNIX INC. |
发明人 |
KIM, YEON UK;LIM, HEE JOON;HWANG, JEONG TAE |
分类号 |
G11C16/06;G11C16/30;G11C16/32 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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