| 发明名称 |
Method for etching substrate |
| 摘要 |
A method for etching a substrate includes etching at least one first layer of the substrate with a non-uniform substrate temperature and etching at least one second layer of the substrate with uniform substrate temperatures. |
| 申请公布号 |
US8668837(B2) |
申请公布日期 |
2014.03.11 |
| 申请号 |
US201213455354 |
申请日期 |
2012.04.25 |
| 申请人 |
DOAN KENNY LINH;KIM JONG MUN;APPLIED MATERIALS, INC. |
发明人 |
DOAN KENNY LINH;KIM JONG MUN |
| 分类号 |
C03C15/00;H01L21/302 |
主分类号 |
C03C15/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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