| 摘要 |
A semiconductor memory device (10) includes a memory controller (12) and an array (20) of memory cells connected to the memory controller. The memory controller performs a first soft program operation (56) using first soft program voltages and a first soft program verification level and determines whether a first charge trapping threshold value is reached (54). When the first charge trapping threshold value is reached, a second soft program operation (56) is performed using a second soft program voltages and a second soft program verification level. [Reference numerals] (42) Perform a removal process; (44) Verification for the removal is passed?; (46,62) Reach a maximum pulse coefficient?; (48,64) Failure; (50) Intensive; (52) Charge tramping control is disabled?; (54) Reach a charge tramping threshold?; (56) Perform a soft programming; (58) Soft programming is passed?; (60) End; (68) Control the soft program and corresponding verification parameters; (AA,CC,FF,HH,JJ.KK) No; (BB,DD,EE,GG,II,LL) Yes |
