发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 The present invention relates to a method for operating a semiconductor memory device which forms a plurality of data distributions to perform write and read operations. The method comprises the steps of: performing a first programming operation and forming a first data distribution upon a first write operation; detecting the first data distribution with a first reference voltage corresponding to the first programming operation and outputting scheduled data upon a first read operation; performing a second programming operation and forming a second data distribution upon a second write operation; and detecting the second data distribution with a second reference voltage corresponding to the second programming operation and outputting the identical data to the scheduled data corresponding to the first data distribution upon the first read operation, at the time of a second read operation. [Reference numerals] (AA) Start; (BB) End; (S210) Memory block removal operation; (S220) First write operation; (S230) First read operation; (S240) Second write operation; (S250) Second read operation
申请公布号 KR20140029709(A) 申请公布日期 2014.03.11
申请号 KR20120095052 申请日期 2012.08.29
申请人 SK HYNIX INC. 发明人 JEONG, BYOUNG KWAN;KIM, JEE YUL
分类号 G11C16/34;G11C16/10 主分类号 G11C16/34
代理机构 代理人
主权项
地址