LIFT-OFF PROCESSING FOR FORMATION OF ISOLATION REGIONS IN LASER DIODE STRUCTURES

摘要

A method of fabricating a laser diode structure is provided where a photolithographic process is utilized to form at least a portion of an axially extending waveguide structure such that a patterned photoresist remnant resides over the axially extending waveguide structure following the photolithographic process. A patterned isolated opening and a lift-off photoresist portion are formed in the patterned photoresist remnant by subjecting the patterned photoresist remnant to an additional photolithographic process such that the lift-off photoresist portion remains in residence over the axially extending waveguide structure following the additional photolithographic process. An insulating layer is formed over the patterned isolated opening and the lift-off photoresist portion.