A semiconductor device is provided. The semiconductor device includes at least one SRAM cell. Each SRAM cell includes a pull up transistor, a pull down transistor, and a pass gate transistor. The Tinv of the gate stack of the pass gate transistor is different from the Tinv of the gate stacks of the pull up transistor and the pull down transistor.
申请公布号
KR20140029957(A)
申请公布日期
2014.03.11
申请号
KR20120096613
申请日期
2012.08.31
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YU, CHEONG SIK;BAE, CHOEL HWYI;KIM, JU YOUN;HONG, CHANG MIN