| 摘要 |
<p>The present technology includes a step of forming a first sacrificial layer on a substrate by a first deposition method; a step of injecting ions into the first sacrificial layer; a step of alternately stacking interlayer dielectrics and second sacrificial layers by a second deposition method; a step of forming a slit penetrating the interlayer dielectrics, the second sacrificial layers, and the first sacrificial layer; and a step of forming a conductive layer trenches by removing the first sacrificial layer and the second sacrificial layers which is opened through the slit. [Reference numerals] (AA) Injecting ion; (BB) Cell area Y-Z cross-section; (CC) Cell area X-Z cross-section</p> |
