NONVOLATILE MEMORY DEVICE AND SUB-BLOCK MANAGEMENT METHOD TEREROF

摘要

A nonvolatile memory device according to the present invention includes a memory block which includes memory cells stacked in an intersection direction with a substrate, a row decoder which divides the memory block into a plurality of sub-block units which are independently erased and selects a sub-block, a voltage generator which generates an erase word line voltage supplied to a first word line of the selected sub-block in an erasing operation and a blocking voltage which is supplied to a second word line and is higher than the erase word line voltage, and a control logic which controls the row decoder and the voltage generator to perform the erasing operation of the selected sub-block.