SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

[OBJET] provided is a technique for realizing the high integration of a semiconductor device using a TSV technique. [SOLUTION] a small-diameter through electrode (TE1) has a first diameter where a through electrode is formed in the main surface (S1) of a semiconductor substrate (SW). A large-diameter through electrode (TE2) has a second diameter which is greater than the first diameter. The large-diameter through electrode (TE2) is formed in the back surface of the semiconductor substrate (SW). Not to overlap the center position of the small-diameter through electrode (TE1) with the center position of the large-diameter through electrode (TE2) in a plane, the small-diameter through electrode (TE1) is arranged in the inside of the large-diameter through electrode (TE2) in the plane. [Reference numerals] (AA) TSV formation region; (BB) Element formation region; (CC) Center 1; (DD) Center 2; (S1) Main surface; (S2) Other surface; (SW) Semiconductor substrate; (TE1) Small-diameter through electrode; (TE2) Large-diameter through electrode