| 摘要 |
A semiconductor integrated circuit device comprises: a first sense amplifier region and a second sense amplifier region placed adjacent in a row direction; and a PMOS transistor and an NMOS transistor which are formed in the first and the second sense amplifier region, respectively, and are sequentially arranged in a column direction perpendicular to the row direction. A PMOS transistor gate of the first sense amplifier region and an NMOS transistor gate of the second sense amplifier region include gate extension portions, respectively. |
