PHOTOMASK, METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME AND METHOD OF MEASURING OVERLAY OF PATTERN

摘要

An embodiment provides a photomask for a semiconductor device. The photomask includes a cell mask pattern disposed on a cell region of a mask substrate and a vernier mask pattern disposed at a peripheral region of the mask substrate. The vernier mask pattern includes a variable mask pattern portion in which a shape of a transferred pattern is changed according to a size of exposure energy.