| 摘要 |
A method for forming a semiconductor device having a metal line according to the present invention includes: forming a metal line pattern in an inter-metal insulation layer; exposing a part of an outer sidewall of the metal line pattern by recessing the inter-metal insulation layer; forming a silicon rich nitride layer extending an exposed outer sidewall and a top surface of the metal line pattern and a surface of the inter-metal insulation layer; forming a metal silicide layer at a boundary of a top surface of the silicon rich nitride layer making contact with the metal line pattern; exposing the surface of the inter-metal insulation layer between the metal line patterns by performing a primary etch process on the nitride layer; forming an open region between the metal line pattern by performing a secondary etch process on the exposed surface of the inter-metal insulation layer; and forming an air gap between the metal line pattern by forming a capping insulation layer on the metal line pattern. |
