| 摘要 |
A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×10 7 N/m 2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration. |
