NON-POLAR SUBSTRATE HAVING HETERO-STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, NITRIDE-BASED LIGHT EMITTING DEVICE USING THE SAME

摘要

The present invention relates to a semiconductor substrate and, more specifically, to a non-polar heterogeneous substrate, a manufacturing method thereof, and a nitride-based light emitting diode using the same. The present invention comprises an r-surface sapphire substrate, a nucleus generation layer, a first nitride semiconductor layer, a porous mask layer, and a second nitride semiconductor layer. The nucleus generation layer is positioned on the r-surface sapphire substrate and includes an a-surface or m-surface nitride semiconductor. The first nitride semiconductor layer is positioned on the nucleus generation layer and has first defect density. A plurality of pits having an inclined surface on the upper surface is positioned on the first nitride semiconductor layer. The porous mask layer is positioned on one or more pits on the first nitride semiconductor layer. The second nitride semiconductor layer is positioned on the porous mask layer and has second defect density which is lower than the first defect density. [Reference numerals] (S10) Form a nucleus generation layer; (S20) Form a first nitride semiconductor layer; (S21) Etching; (S30) Form a porous mask layer; (S40) Form a second nitride semiconductor layer