| 摘要 |
The purpose of this technique is to prevent data on memory cells from being deteriorated by word line disturbance. A memory according to the present invention comprises: first to N^th word line groups including a plurality of word lines; first to M^th word line groups including a plurality of redundancy word lines to replace M number of word line groups among the first to N^th word line groups; and a control unit for activating at least one adjacent word line adjacent to a redundancy word line, which replaces a word line corresponding to the input address among a plurality of redundancy word lines of a K^th (1 <= K <= M) redundancy word line group, in response to an active signal, when a word line group including a word line corresponding to an input address among the first to N^th word line groups is replaced with the K^th redundancy word line group among the first to M^th redundancy word line groups in a first mode. [Reference numerals] (420) Memory controller |
