ETCHANT COMPOSITION FOR ETCHING METAL WIRE AND METHOD FOR PREPARING METAL WIRE USING THE SAME

摘要

Disclosed are a gate of a thin film transistor which is composed of a semiconductor circuit by etching a metal film, a metal wire etchant composition for forming a source-drain area, and a method for forming a metal wire by using the same. The metal wire etchant composition comprises 1.0-10 wt% of hydrogen peroxide, 0.1-5 wt% of organic acid, 0.1-2 wt% of water-soluble ligand, 0.02-1 wt% of a fluorine compound, 0.01-1 wt% of a zole-based compound, and residual water. [Reference numerals] (AA) Example 1; (BB) Example 2; (CC) Example 3; (DD) Example 4; (EE) Example 5