| 摘要 |
A laser annealing method, a semiconductor layer, a semiconductor device, and an electro-optical device are provided to grow uniformly a lateral crystal by exchanging laser beam irradiation conditions of a granular crystal part and an amorphous part. A lateral crystal is grown by performing a laser annealing process for irradiating a laser beam on a region of a target semiconductor layer. A lateral crystallization process is performed by performing repeatedly the laser annealing process for a region including a granular crystal part and an amorphous part. A melting process is performed to melt the granular crystal part and the amorphous part of the target semiconductor layer. The laser annealing process is performed in order not to melt a lateral crystal part of the target semiconductor layer. The laser annealing process is performed by exchanging laser beam irradiation conditions of the granular crystal part and the amorphous part. |
