| 摘要 |
A semiconductor device of the present invention includes a semiconductor substrate including a cell region and a peripheral region, a metal line formed in the outer part of the cell region and the peripheral region, and a hydrogen moving path layer which is formed on the upper part of the metal line and is filled between the metal lines. A moving path of hydrogen generated in a passivation anneal process for removing a silicon dangling bond is secured and elements acting as a trap are reduced. Thereby, the properties of the semiconductor device can be improved. |
