| 摘要 |
The present invention relates to a nonvolatile memory device, a control method thereof, and a data processing system using the same and, more particularly, to technology to control the driving of a flash memory device. The nonvolatile memory device includes a cell array which includes a plurality of cells connected between a word line and a bit line, a driving control unit which calculates a constant value corresponding to the change of word line resistance measured according to the position of the word line and sets the rising time of the word line by combining the constant value with a word line address, and a voltage supplying unit which supplies a bias voltage corresponding to the rising time which is set in the driving control unit. [Reference numerals] (100) Cell array; (110) Decoding unit; (120) Page buffer; (130) Data control unit; (140) I/O pad; (151) Constant calculation unit; (152) Rising time control unit; (160) Voltage providing unit |
