| 摘要 |
<p>The present invention relates to a semiconductor device and a method for fabricating the same. Particularly, the present invention relates to a technique for preventing a short between the silicon of a semiconductor substrate and a bump in a through substrate via (TSV) process. According to the present invention, the semiconductor device includes a TSV penetrating a semiconductor substrate which includes one surface where a circuit pattern is formed; a first ion injection layer formed in the other surface which faces the one surface of the semiconductor substrate; and a bump connected to the TSV.</p> |
