| 摘要 |
<p>According to the present invention, an anti fuse of a semiconductor device includes a semiconductor substrate which includes a device isolation layer and an active region, a gate structure which passes the boundary part of the active region and the device isolation layer, a contact which is connected to at least one part of the sidewall of the gate structure, and a metal line which is formed on the upper part of the gate structure. As the success rate of the breakage of the anti fuse improves, the quality of the semiconductor device can be improved, costs can be reduced by increasing a net die by reducing the area of the anti fuse, the success rate of the breakage of the anti fuse can be greatly improved by providing a structure where there is an insulting layer between a gate and a contact.</p> |
