| 摘要 |
Disclosed is a method for manufacturing a semiconductor device that includes forming a preliminary mask pattern according to a layout where wave line patterns including connecting bar pattern portions which connects the main pattern portions on an etch object layer are arranged in a line; providing the arrangement of additional space portions by removing the main pattern portions after a node separation wall is formed in a sidewall; and arranging the nodes which etch the etch object layer using the node separation wall as a barrier. |
