| 摘要 |
The technology provides a semiconductor device capable of independently adjusting a threshold voltage of an NMOS transistor and a threshold voltage of a PMOS transistor, and a method of fabricating the same. The method of fabricating a semiconductor device according to the technology includes: forming a gate insulation layer on an entire surface of a semiconductor substrate including an NMOS region and a PMOS region; forming a tungsten containing carbon on a gate insulation layer of the NMOS region; forming a tungsten nitride containing the carbon on the gate insulation layer of the PMOS region; forming a tungsten layer on the tungsten containing the carbon and the tungsten nitride containing the carbon; performing a post heat treatment for the semiconductor substrate on which the tungsten layer is formed; and forming a first gate electrode and a second gate electrode on the NMOS region and a PMOS region by etching the tungsten layer, the tungsten containing the carbon, and the tungsten nitride containing the carbon, respectively.The technology may form a dual metal gate electrode having a work function suitable for each transistor and a low resistance as a gate electrode of the NMOS transistor and the PMOS transistor by using a tungsten-containing layer that contains a material for adjusting a work function. |
