发明名称 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
摘要 <p>Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a device isolation layer which defines the active regions of a substrate, and gate lines which intersects with the active regions and includes gate lines buried in the substrate. The gate lines include a first part on the device isolation layer, and a second part on the active region. The upper surface of the first part is lower than that of the second part.</p>
申请公布号 KR20140028802(A) 申请公布日期 2014.03.10
申请号 KR20120095921 申请日期 2012.08.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYUN CHUL;KIM, JAE SEOK;PARK, CHAN HONG
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
主权项
地址