发明名称 |
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a device isolation layer which defines the active regions of a substrate, and gate lines which intersects with the active regions and includes gate lines buried in the substrate. The gate lines include a first part on the device isolation layer, and a second part on the active region. The upper surface of the first part is lower than that of the second part.</p> |
申请公布号 |
KR20140028802(A) |
申请公布日期 |
2014.03.10 |
申请号 |
KR20120095921 |
申请日期 |
2012.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYUN CHUL;KIM, JAE SEOK;PARK, CHAN HONG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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