| 摘要 |
<p>According to the present invention, a semiconductor device includes a trench which is formed in a semiconductor substrate where an active region is defined by an insulating layer, a buffer pattern defined by the insulating layer, and a buried gate which is buried in the trench. The size of the end part of the buried gate is increased to form the upper part of the active region. Thereby, the short of a semiconductor substrate due to metal contact misalignment can be prevented.</p> |
