A VERTICAL TYPE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A vertical type semiconductor device is protruding from the top surface of a substrate in a vertical direction and includes a pillar structure having a semiconductor pattern and a channel pattern. A first word line structure horizontally extends while surrounding the pillar structure on the part facing the channel pattern, in which includes a blocking dielectric layer and a metal pattern, and having a shape in which a height is extended on the part touching the pillar structure is provided. Furthermore, a first insulation film structure interposed between the first word line structures in a first direction while surrounding the pillar structure and having a first part touching the pillar structure while having a relatively low height and a second part horizontally extended in a lateral direction of the first part is provided. The vertical type semiconductor device is capable of increasing the laminated stage number of cells as the height of each cell is reduced. [Reference numerals] (AA) First direction; (BB) Second direction; (CC) Third direction