NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device according to the present invention includes a memory cell array which includes a plurality of nonvolatile memory cells connected to bit lines and word lines crossing the bit lines, respectively, a voltage driving unit which supplies a word line voltage to the word lines, supplies a first voltage for a precharge operation and supplies a second voltage for a sensing operation based on a voltage setting signal, and a page buffer unit which controls the precharge level of a sensing node connected to the bit line of a page included in the selected memory block of the memory cell array by using the first voltage and controls the sensing level of the sensing node by using the second voltage. [Reference numerals] (100) Voltage driving unit; (200) Memory cell array; (300) Page buffer unit; (400) Voltage setting unit