PLASMA-ENHANCED ETCHING IN AN AUGMENTED PLASMA PROCESSING SYSTEM

摘要

The present invention relates to a substrate etching method in a plasma processing chamber having at least a primary plasma generation region and a secondary plasma generation region separated from the primary generation region. The method includes the step of generation primary plasma from primary supply gas at the primary plasma generation region. The method also includes the step of generating secondary plasma from secondary supply gas at the secondary plasma generation region to enable at least some of the secondary plasma to move the primary plasma generation region. The method additionally includes the step of etching a substrate with the primary plasma after the primary plasma being augmented to the plasma moved from the secondary plasma. [Reference numerals] (104) Wafer; (110) Primary RF power; (120) Secondary plasma; (134) Delivering secondary process gas; (136) Secondary RF power; (152) Delivering primary process gas; (AA) RF ground; (BB) Injecting activated intermediate; (CC) Primary plasma(water processing region)