Semiconductor wafer thinning method, involves depositing protection layer on set of sides of grooves, sticking wafer on support, and thinning wafer starting from its rear face until reaching bottom of set of grooves

摘要

The method involves forming a set of components and a set of interconnection levels (IL) on a front face of a semiconductor wafer (W1) i.e. silicon-on-insulator type semiconductor wafer. A set of grooves is dug starting from a front face along a periphery of the wafer, and a protection layer (14) is deposited on a set of sides of the set of grooves. The wafer is stuck on a support wafer (W2) of same dimensions. The wafer is thinned starting from its rear face until reaching the bottom of the set of grooves. An independent claim is also included for a semiconductor slice.