| 摘要 |
A normally-off nitride based transistor and a method of fabricating the same are disclosed. The nitride based transistor includes a substrate, a channel layer which is located on the substrate and has a first nitride based semiconductor of non-polarity or semi-polarity, a delta doping layer which is located on the channel layer, a barrier layer which is located on the channel layer and a second nitride based semiconductor of non-polarity or semi-polarity, and a gate electrode which is located on the barrier layer. A nitride based transistor of a normally-off property can be provided using a barrier layer and a channel layer of non-polarity or semi-polarity. Also, carrier density can be increased using a delta doping layer. |
