SEMICONDUCTOR MEMORY DEVICE AND SYSTEM HAVING REDUNDANCY CELLS

摘要

A semiconductor memory device and a system containing redundancy cells are disclosed. The semiconductor memory device according to an embodiment of the present invention comprises: a plurality of cell groups each connected to a data line; a redundancy cell group which contains redundancy cells for repairing a defective cell included in the plurality of cell groups, and is connected to a redundancy data line; and a data line select block, including a plurality of selection units that corresponds to the plurality of cell groups, in which a first selection unit corresponding to a first cell group is connected to a first data line and at least two different data lines, and selectively outputs data through any one data line among the two different data lines when the defective cell is accessed.