| 摘要 |
Provided are a sputtering target that is capable of forming a Cu-Ga film, which has an added Ga concentration of 1 to 40 at% and into which Na is well added, by a sputtering method and a method for producing the sputtering target. The sputtering target has a component composition that contains 1 to 40 at% of Ga, 0.05 to 2 at% of Na as metal element components other than F, S and Se, and the balance composed of Cu and unavoidable impurities. The sputtering target contains Na in at least one form selected from among sodium fluoride, sodium sulfide, and sodium selenide, and has a content of oxygen of from 100 to 1,000 ppm. |
