| 摘要 |
According to one embodiment of the present invention, provided is a light emitting device which includes: a substrate; a light emitting structure which is arranged on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an Al-based buffer layer which is arranged on the light emitting structure; and a light extraction structure which is arranged on the Al-based buffer layer and has an uneven part on the surface thereof. The light extraction structure includes a plurality of layers. The layers include first to n-th layers which are arranged from the Al-based buffer layer in order (n is an integer and is 2 or more). The refractive index of the n-the layer is larger than the refractive index of an (n-1)-th layer. |
