| 摘要 |
A method for etching a desired complex pattern (50), in a first face of a substrate, comprising the following steps: - simultaneous etching of at least one first and one second sub-pattern through the first face of the substrate, the etched sub-patterns being separated by at least one separation wall, the width of the first sub-pattern being greater than the width of the second sub-pattern on the first face, and the depth of the first sub-pattern being greater than the depth of the second sub-pattern in a direction perpendicular to said first face, - a step of removing or eliminating said separation wall to reveal the desired complex pattern (50). |
