发明名称 Doping-free silicon solar cell and the Fabrication method thereof
摘要 <p>The present invention relates to an amorphous silicon solar cell that includes an upper/lower electrode and an interfacial electrode applying an electric field between light absorption layers without a doping process. Because a doping process is not carried out, a harmful doping gas is not used. Also, because a window layer for receiving light is used as a metallic oxide which has high light transmission and a function of transferring holes, the loss of light reaching a light absorption layer can be minimized and the photocurrent density improved.</p>
申请公布号 KR101369729(B1) 申请公布日期 2014.03.07
申请号 KR20120079437 申请日期 2012.07.20
申请人 发明人
分类号 H01L31/042;H01L31/18 主分类号 H01L31/042
代理机构 代理人
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