发明名称 BLOCK COPOLYMERS FOR LITHOGRAPHY
摘要 <p>Provided is a block copolymer for lithography, having 3,000-30,000 of an average molecular weight number comprising: a first polymer block comprising a first monomer selected from a diene monomer, an aromatic vinyl monomer, a heteroaromatic vinyl monomer; and a second polymer block comprising a second monomer selected from a (meth)acrylate derivative, wherein the first polymer block and the second polymer block have at least 0.2 of an interaction parameter (χ) indicated by the mathematical formula 1 below:′Mathematical Formula 1′(In the formula above,χrefers to an interaction parameter, Vm to the molar volume of major polymer blocks, R to a gas constant, T to a temperature (K),δ_A to a solubility parameter of a homopolymer comprising the first monomer, andδ_B to a solubility parameter of a homopolymer comprising the second monomer).</p>
申请公布号 KR20140027807(A) 申请公布日期 2014.03.07
申请号 KR20120093872 申请日期 2012.08.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KOH, HAENG DEOG;KIM, MI JEONG;PARK, YOUN JUNG;JEONG, SEONG JUN
分类号 C08F297/04;C08F279/06;G03F7/004 主分类号 C08F297/04
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