发明名称 |
PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE |
摘要 |
This plasma processing method executes an etching step (step S101) for supplying a fluorine-containing gas to a plasma processing space, and using fluorine-containing gas plasma to etch a substrate to be processed to which a silicon nitride film or silicon oxide film has been formed at the surface of a nickel silicide film. Next, the plasma processing method executes a reduction step (step S102) for supplying a hydrogen-containing gas to the plasma processing space, and using hydrogen-containing gas plasma to reduce an adhered nickel-containing material after the etching step with respect to a member disposed in a manner such that the surface thereof faces the plasma processing space. Next, the plasma processing method executes an elimination step (step S103) for supplying an oxygen-containing gas to the plasma processing space, and using oxygen-containing gas plasma to eliminate the nickel obtained by reducing the nickel-containing material by means of the reduction step. |
申请公布号 |
WO2014034674(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
WO2013JP72893 |
申请日期 |
2013.08.27 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HARADA, AKITOSHI;LIN, YEN-TING;CHEN, CHIH-HSUAN;HSIEH, JU-CHIA;YONEDA, SHIGERU |
分类号 |
H01L21/3065;H01L21/28;H01L21/768 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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