| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body provided on a foundation layer and including a plurality of electrode layers and a plurality of insulating layers alternately stacked; a plurality of first channel body layers; a memory film; a first interlayer insulating film; a plurality of select gate electrodes; a second channel body layer being connected to each of the plurality of first channel body layers; and a gate insulating film. The stacked body is bent. The first interlayer insulating film includes a slit extending in a direction generally parallel to the upper surface of the stacked body, the slit extends in a direction non-parallel to a first direction in which each end surface of the plurality of electrode layers extends. Part of at least one end surface of the plurality of electrode layers is part of bottom of the slit. |
