| 摘要 |
Phase-change memory arrays, subarrays and chips, and systems and devices in which phase change memory is used, in which two reference columns are added on to hold complementary states for each wordline of data. The outputs from the cells in the two reference columns are combined (e.g. as a plain or weighted average) to provide a reference value for read discrimination of cell states in the other columns. This provides reference values which closely track resistance changes in corresponding ones of said words resulting from, e.g., drift and other time- and phase change material-dependent factors. One of the columns of reference cells can hold a checksum. |
