发明名称 |
Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body |
摘要 |
A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body. |
申请公布号 |
US2014061694(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201214002487 |
申请日期 |
2012.02.28 |
申请人 |
LEIRER CHRISTIAN;VOGL ANTON;BIEBERSDORF ANDREAS;BUTENDEICH RAINER;RUMBOLZ CHRISTIAN;OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
LEIRER CHRISTIAN;VOGL ANTON;BIEBERSDORF ANDREAS;BUTENDEICH RAINER;RUMBOLZ CHRISTIAN |
分类号 |
H01L33/00;H01L33/22 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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