发明名称 |
TRANSISTOR STRUCTURES AND METHODS OF FABRICATION THEREOF |
摘要 |
An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device. |
申请公布号 |
US2014061650(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201314027713 |
申请日期 |
2013.09.16 |
申请人 |
TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD. |
发明人 |
TESSLER NIR;MARGALIT MOTI;GLOBERMAN ODED;SHENHAR ROY |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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