发明名称 TRANSISTOR STRUCTURES AND METHODS OF FABRICATION THEREOF
摘要 An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.
申请公布号 US2014061650(A1) 申请公布日期 2014.03.06
申请号 US201314027713 申请日期 2013.09.16
申请人 TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD. 发明人 TESSLER NIR;MARGALIT MOTI;GLOBERMAN ODED;SHENHAR ROY
分类号 H01L29/786 主分类号 H01L29/786
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