| 摘要 |
The present invention addresses the problem of obtaining a zinc blende GaN crystal with low dislocation density. A method for manufacturing a GaN crystal is characterized in forming, on an Si substrate, a zinc blende BP crystal layer, a layer containing In being formed on the BP crystal layer at a thickness for maintaining the zinc blende crystal structure, and a zinc blende GaN crystal layer being formed on the layer containing In. The layer containing In is: a metal In layer no more than four atoms thick; an InGaN layer having a thickness of 2 nm or less; and an InAl blended layer no more than four atoms thick, having an Al content of no more than 10%, or an AlInGaN layer having a thickness of 2 nm or less, having an Al content of no more than 10%. The Si substrate preferably has an off angle from the (100) orientation of 3-23°. |
