发明名称 PATTERNED THIN FILM DIELECTRIC STACK FORMATION
摘要 A method of producing an inorganic multi-layered thin film structure includes providing a substrate. A patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process. A second inorganic thin film material layer is selectively deposited on the region of the substrate where the thin film deposition inhibiting material layer is not present using an atomic layer deposition process.
申请公布号 US2014065803(A1) 申请公布日期 2014.03.06
申请号 US201213600292 申请日期 2012.08.31
申请人 ELLINGER CAROLYN R.;LEVY DAVID H.;NELSON SHELBY F. 发明人 ELLINGER CAROLYN R.;LEVY DAVID H.;NELSON SHELBY F.
分类号 C23C16/04;H01L21/20 主分类号 C23C16/04
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