TECHNIQUES FOR METAL GATE WORKFUNCTION ENGINEERING TO ENABLE MULTIPLE THRESHOLD VOLTAGE FINFET DEVICES

摘要

Techniques are provided for gate work function engineering in FIN FET devices using a work function setting material an amount of which is provided proportional to fin pitch. In one aspect, a method of fabricating a FIN FET device includes the following steps. A SOI wafer having a SOI layer over a BOX is provided. An oxide layer is formed over the SOI layer. A plurality of fins is patterned in the SOI layer and the oxide layer. An interfacial oxide is formed on the fins. A conformal gate dielectric layer, a conformal gate metal layer and a conformal work function setting material layer are deposited on the fins. A volume of the conformal gate metal layer and a volume of the conformal work function setting material layer deposited over the fins is proportional to a pitch of the fins. A FIN FET device is also provided.